DocumentCode
2986746
Title
A Q-band Low Phase Noise Voltage Controlled Oscillator Using Balanced π-Feedback in 2-μm GaAs HBT Process
Author
Lin, Chi-Hsein ; Liang, Kung-Hao ; Chang, Hong-Yeh ; Chan, Yi-Jen ; Chiong, Chau-Ching ; Bryerton, Eric
Author_Institution
Nat. Central Univ., Chungli
fYear
2007
fDate
3-5 June 2007
Firstpage
119
Lastpage
122
Abstract
A Q-band low phase noise voltage controlled oscillator (VCO) using balanced π-feedback with 2-μm GaAs heterojunction bipolar transistor (HBT) process is reported in this paper. The VCO features a phase noise of -105.5 dBc/Hz at 1-MHz offset, and a tuning frequency of from 41.2 to 42.1 GHz with a maximum output power of -9 dBm. The differential outputs are also provided from the VCO due to the use of balanced π-feedback. The overall dc power consumption of the VCO is only 20 mW with a supply voltage of 2.5 V. The chip size of the VCO is 1 times 1 mm2. To the best of the authors´ knowledge, this work demonstrates the lowest FOM among all the reported VCOs except the InP-based HBT VCOs around 40 GHz.
Keywords
III-V semiconductors; feedback oscillators; gallium arsenide; heterojunction bipolar transistors; phase noise; voltage-controlled oscillators; π-feedback; FOM; GaAs; Q-band low phase noise voltage controlled oscillator; heterojunction bipolar transistor; power 20 mW; tuning frequency; voltage 2.5 V; CMOS technology; Energy consumption; Frequency; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Phase noise; Silicon germanium; Voltage-controlled oscillators; π-feedback; GaAs; HBT; VCO; low phase noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
ISSN
1529-2517
Print_ISBN
1-4244-0530-0
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2007.380846
Filename
4266394
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