DocumentCode :
298683
Title :
The effect of annealing and oxidation on APCVD TiOx film and its impact on the process of silicon solar cells
Author :
Wong, David C. ; Waugh, Art ; Yui, Bob ; Sharrock, Paul
Author_Institution :
BTU Int., North Billerica, MA, USA
Volume :
1
fYear :
1994
fDate :
5-9 Dec 1994
Firstpage :
905
Abstract :
Properties of TiOx film, prepared by atmospheric pressure chemical vapor deposition (APCVD) as an anti-reflective (AR) coating on silicon solar cells have been extensively investigated. The effect of film densification, after annealing at temperatures as low as 430°C is the transition from amorphous to crystalline. This effect is found to be crucial to the large scale manufacturing of solar cells because of its cost effectiveness and simpler processing requirements. Results of heat treatment and the change in morphology is presented. The impact of annealing on Spheral Solar cell performance is also discussed
Keywords :
CVD coatings; annealing; antireflection coatings; densification; elemental semiconductors; optical films; oxidation; semiconductor materials; silicon; solar cells; titanium compounds; 430 C; Si; Si solar cells; Spheral Solar cell performance; TiO; TiOx film; annealing; anti-reflective coating; atmospheric pressure chemical vapor deposition; film densification; heat treatment; morphology; oxidation; silicon solar cells; Amorphous materials; Annealing; Chemical vapor deposition; Coatings; Crystallization; Oxidation; Photovoltaic cells; Semiconductor films; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.520108
Filename :
520108
Link To Document :
بازگشت