Experimental Study on the Role of Hot Carrier Induced Damage on High frequency Noise in Deep Submicron NMOSFETs

Impact of hot carrier induced interface damage and its spatial location on RF noise in deep sub-micrometer NMOSFETs is studied A significant increase in minimum noise figure NF_min and noise resistance R_nmiddot after hot carrier stress, which cannot be explained alone by the change of the carrier density in the inversion layer, was observed. It was demonstrated that the presence of interface states at source side shows much greater impact on the degradation of NF_min and R_n. This provides strong experimental evidence that the local noise at source side plays a more important role in determining the channel noise.