Thick graphene transfer and RIE etching for chip cooling

Author

Woongkyu Choi ; Jinwoo Jeong ; Kukjin Chun ; Byung Do Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea

fYear

2013

fDate

22-25 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

Thick graphene which was grown by Chemical Vapor Deposition(CVD) on Nickel substrate and had thickness range about 500nm ~ 1μm was transferred into Si wafer using Hot Pressing with Thermal Release Tape(TRT). After transferring thick graphene into Si wafer, Scotch tape peeling test and Raman spectrum analysis were conducted. Patterning of thick graphene was demonstrated by RIE process with O₂, Ar gas. Thick graphene etch rate is about 100nm/min at a etching condition which is O₂-70sccm, Ar-30sccm, chamber pressure-0.055Torr, RF power-150W.

Keywords

chemical vapour deposition; cooling; elemental semiconductors; graphene; hot pressing; nickel; semiconductor growth; silicon; sputter etching; Ni; RIE etching; Raman spectrum analysis; Si; chemical vapor deposition; chip cooling; hot pressing; peeling test; power 150 W; thermal release tape; thick graphene transfer; Carbon; Etching; Graphene; Pressing; Substrates; Thermal conductivity; Three-dimensional displays; Chip cooling; Etching thick graphene; Thick graphene; Tranferring thick graphene;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2013 - 2013 IEEE Region 10 Conference (31194)

Conference_Location

Xi´an

ISSN

2159-3442

Print_ISBN

978-1-4799-2825-5

Type

conf

DOI

10.1109/TENCON.2013.6719044

Filename

6719044