DocumentCode
2987320
Title
A New Failure Mechanism And Its Improvement On Gate Oxide Reliability At Field Edge By Locos Isoiation
Author
Takahashi, M. ; Uchida, H. ; Nagatomo, Y. ; Hirashita, N. ; lno, M.
Author_Institution
Oki Electric Industry Co., Ltd.
fYear
1992
fDate
21-24 June 1992
Keywords
Annealing; Current-voltage characteristics; Degradation; Dielectric breakdown; Electrodes; Failure analysis; Leakage current; MOS capacitors; Oxidation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location
Cambridge, MA, USA
Type
conf
DOI
10.1109/DRC.1992.671905
Filename
671905
Link To Document