DocumentCode :
2987402
Title :
Temperature and Process Variations Aware Power Gating of Functional Units
Author :
Kannan, Deepa ; Shrivastava, Aviral ; Mohan, Vipin ; Bhardwaj, Sarvesh ; Vrudhula, Sarma
Author_Institution :
Arizona State Univ., Tempe
fYear :
2008
fDate :
4-8 Jan. 2008
Firstpage :
515
Lastpage :
520
Abstract :
Technology scaling has resulted in an exponential increase in the leakage power as well as the variations in leakage power of fabricated chips. Functional units (FUs), like Integer ALUs are regions of high power density and significantly contribute to the variation in the whole processor power consumption. Hence, it is important to reduce both the power consumption and the variation in power consumption of the FUs. Among existing FU power reduction techniques, power gating (PG) has been most effective. In this paper, we introduce a leakage sensor inside the FUs and propose a temperature and process variation aware power gating scheme, Leakage Aware Power Gating (LA-PG). Our experimental results demonstrate that LA-PG results in 22% reduction in mean and a 25% reduction in standard deviation of the ALU energy consumption when compared to existing power gating techniques, without significant performance penalty.
Keywords :
logic gates; low-power electronics; microprocessor chips; sensors; ALU energy consumption; functional units; leakage power; leakage sensor; process variations aware power gating; processor power consumption; technology scaling; temperature aware power gating scheme; Electronic design automation and methodology; Energy consumption; Informatics; Laboratories; Manufacturing; Microarchitecture; Power generation; Process design; Temperature sensors; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 2008. VLSID 2008. 21st International Conference on
Conference_Location :
Hyderabad
ISSN :
1063-9667
Print_ISBN :
0-7695-3083-4
Type :
conf
DOI :
10.1109/VLSI.2008.83
Filename :
4450551
Link To Document :
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