Title :
CPW and discontinuities modeling for circuit design up to 110 GHz in SOI CMOS technology
Author :
Siligaris, A. ; Mounet, C. ; Reig, B. ; Vincent, P.
Author_Institution :
CEA, Grenoble
Abstract :
This paper presents a new modeling method for integrated coplanar wave guides (CPW) and CPW discontinuities implemented in silicon on insulator (SOI) CMOS technology. Empirical equations, which are fitted to 3D EM simulations, are used to describe the electrical behavior of CPW as a function of the line´s geometrical parameters. The models are validated through measurements up to 110 GHz. Thanks to accurate full wave simulations, discontinuities such as underpasses, 90deg bends, and tee and cross junctions are improved, and electrical models are developed. All models are easily implemented in commercial CAD tools. Finally, a 60 GHz band-pass filter is designed applying the described models and the simulations are compared to measurements.
Keywords :
band-pass filters; coplanar waveguides; microwave filters; silicon-on-insulator; CPW; SOI CMOS technology; band-pass filter; circuit design; discontinuities modeling; full wave simulations; integrated coplanar wave guides; silicon on insulator; CMOS technology; Circuit simulation; Circuit synthesis; Coplanar waveguides; Design automation; Equations; Integrated circuit technology; Semiconductor device modeling; Silicon on insulator technology; Solid modeling; 60 GHz; 90° bend; CMOS millimeter wave integrated circuit; Silicon on insulator; coplanar wave guide; high frequency modeling; tee junction; underpass;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380886
