DocumentCode
2987473
Title
47 GHz SiGe-MMIC oscillator
Author
Rheinfelder, C.N. ; Strohm, K.M. ; Metzger, L. ; Kibbel, H. ; Luy, J.-F. ; Heinrich, W.
Author_Institution
DaimlerChrysler Res. Centre, Ulm, Germany
Volume
1
fYear
1999
fDate
13-19 June 1999
Firstpage
5
Abstract
A 47 GHz MMIC SiGe-HBT oscillator on high-resistivity silicon is presented. An output power of 13.1 dBm and an efficiency of 13.6% is measured. The oscillator exhibits a phase-noise of -99.31 dBc/Hz at 100 kHz off-carrier. These results represent a new record value for SiGe-HBT based oscillators.
Keywords
Ge-Si alloys; MMIC oscillators; bipolar MIMIC; heterojunction bipolar transistors; integrated circuit design; integrated circuit noise; millimetre wave oscillators; phase noise; semiconductor materials; 13.6 percent; 47 GHz; EHF; HBT LC oscillator; MM-wave IC; Si; SiGe; SiGe MMIC oscillator; high-resistivity Si substrate; phase noise; Conductivity; Costs; Fabrication; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Oscillators; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779412
Filename
779412
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