DocumentCode
2987492
Title
A 50 GHz SiGe HBT push-push oscillator
Author
Sinnesbichler, F.X. ; Geltinger, H. ; Olbrich, G.R.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Volume
1
fYear
1999
fDate
13-19 June 1999
Firstpage
9
Abstract
We present a 50 GHz push-push oscillator fabricated in thin film technology on an alumina substrate using silicon-germanium HBTs. Output power of the oscillator is -5.6 dBm with a suppression of the fundamental and the second harmonic signal of -40 dBc and -38 dBc, respectively. Measured phase noise of the oscillator is -98 dBc at an offset frequency of 1 MHz.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; hybrid integrated circuits; millimetre wave integrated circuits; millimetre wave oscillators; semiconductor materials; thin film circuits; 50 GHz; Al/sub 2/O/sub 3/; EHF; MM-wave IC; SiGe; SiGe HBT push-push oscillator; alumina substrate; phase noise; thin film technology; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Oscillators; Power generation; Power system harmonics; Semiconductor thin films; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779413
Filename
779413
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