Experimental Characterization of the Effect of Metal Dummy Fills on Spiral Inductors

Author

Nan, Lan ; Mouthaan, Koen ; Xiong, Yong-Zhong ; Shi, Jinglin ; Rustagi, Subhash Chander ; Ooi, Ban-Leong

Author_Institution

Nat. Univ. of Singapore, Singapore

fYear

2007

fDate

3-5 June 2007

Firstpage

307

Lastpage

310

Abstract

In modern CMOS technologies, metal dummy fills are required to maintain metal density uniformity and to planarize the layers. As frequency increases, the effect of the metal dummy fills on the CMOS integrated circuits or components should be taken into account. This work presents experimental results of the effect of metal dummy fills on the microwave behavior of spiral inductors fabricated in a standard 0.18-mum CMOS technology. The influences on the equivalent model parameters and the Q-factor are characterized based on measured S-parameters of inductors with and without metal dummy fills.

Keywords

CMOS integrated circuits; Q-factor; inductors; CMOS integrated circuit; Q-factor; S-parameter; equivalent model parameter; metal dummy fills; microwave behavior; size 0.18 micron; spiral inductor; CMOS integrated circuits; CMOS technology; Frequency; Inductors; Integrated circuit measurements; Integrated circuit technology; Microwave technology; Q factor; Semiconductor device modeling; Spirals; CMOS technology; chemical-mechanical polishing process (CMP); metal dummy fills; microwave measurements; spiral inductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380889

Filename

4266437