Title :
Antimonide semiconductor saturable absorber for mode locking of a 1.5-μm Er:Yb:glass laser
Author :
Grange, R. ; Haiml, M. ; Krainer, L. ; Spühler, G.J. ; Schön, S. ; Keller, U. ; Ostinelli, O. ; Ebnöther, M. ; Gini, E.
Author_Institution :
Phys. Dept., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
We demonstrate the first antimonide (AlGaAsSb) semiconductor saturable absorber mirror (SESAM) based on InP and grown by MOVPE. We achieved self-starting and passive mode locking of an Er:Yb:glass laser at 1535 nm and 61 MHz.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; erbium; gallium arsenide; laser mirrors; laser mode locking; optical glass; optical saturable absorption; semiconductor growth; solid lasers; vapour phase epitaxial growth; ytterbium; 1.5 mum; 1535 nm; 61 MHz; AlGaAsSb; Er:Yb:glass laser; MOVPE; passive mode locking; self-starting; semiconductor saturable absorber; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Indium phosphide; Laser mode locking; Optical materials; Reflectivity; Semiconductor lasers; Substrates; Time measurement;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202392
