DocumentCode
2987611
Title
Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells
Author
Xu, LiFang ; Patel, D. ; Vaschenko, G. ; Antón, O. ; Menoni, C.S. ; Yeh, Jeng-Ya ; Roy, Tod T Van ; Mawst, L.J. ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
2134
Abstract
A quantum dot-like behavior in the dynamics of carrier recombination is observed in InGaAsN quantum wells at temperatures at and below ∼ 150 K. At higher temperatures defect recombination plays a dominant role.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical materials; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; InGaAsN; InGaAsN quantum wells; carrier recombination; defect recombination; quantum dot-like behavior; strain compensation; Capacitive sensors; Energy states; Gallium arsenide; Indium gallium arsenide; Nitrogen; Photonic band gap; Quantum computing; Quantum dots; Radiative recombination; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202393
Filename
1573459
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