Title :
Direct Extraction Techniques for Thermal Resistance of MESFET and HEMT Devices
Author :
Angelov, Iltcho ; Kärnfelt, Camilla
Author_Institution :
Chalmers Univ. of Technol., Goteborg
Abstract :
A simple technique for direct extraction of junction temperature and thermal resistance for MESFET and HEMT FET is proposed and experimentally evaluated. The techniques were applied for thermal resistance extraction of the mHEMT devices in a microstrip three-stage amplifier before and after flip chip assembly.
Keywords :
Schottky gate field effect transistors; amplifiers; high electron mobility transistors; microstrip circuits; HEMT device; MESFET device; direct extraction technique; flip chip assembly; high electron mobility transistor; microstrip three-stage amplifier; thermal resistance; Assembly; Electrical resistance measurement; Electronic packaging thermal management; Equations; FETs; Flip chip; HEMTs; MESFETs; Temperature dependence; Thermal resistance; FET; Flip chip; Thermal resistance; Transistor Models;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380899
