A Low-Power 5GHz Transceiver in 0.13 μm CMOS for OFDM Applications with Sub-mm2 Area

Author

Han, Yiping ; Larson, Lawrence E.

Author_Institution

Univ. of California, San Diego

fYear

2007

fDate

3-5 June 2007

Firstpage

361

Lastpage

364

Abstract

A 5 GHz direct conversion transceiver is fabricated in a 0.13 mum CMOS process for WLAN 802.11a applications. The transmitter achieves -56 dBc LO leakage, -36 dBc sideband rejection, -43 dBc 3rd harmonic suppression at 5.4 GHz, and an EVM of 3.4% at 5.1 GHz with 60 mW power consumption. The receiver achieves 3.3 dB NF, 27 dB conversion gain, -12 dBm IIP3, and a measured 1/f noise corner of 110 kHz with 36 mW power consumption from a 1.2 V supply voltage. The active area was 0.9 mm².

Keywords

CMOS integrated circuits; OFDM modulation; low-power electronics; transceivers; wireless LAN; CMOS; OFDM applications; WLAN; direct conversion transceiver; frequency 5 GHz; frequency 5.1 GHz; frequency 5.4 GHz; harmonic suppression; low power transceiver; power 36 mW; power 60 mW; size 0.13 mum; voltage 1.2 V; CMOS process; Energy consumption; Gain; Harmonics suppression; Noise measurement; OFDM; Power measurement; Transceivers; Transmitters; Wireless LAN; CMOS; Direct conversion; EVM; Low Voltage; Low-Power; Receiver; Transformer; Transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380901

Filename

4266449