DocumentCode
2987728
Title
Position dependent photocurrent intensity of MSM photodetectors
Author
Yuan, Sitong ; Wang, Jianning ; Zhang, Yumin ; Krasinski, Jerzy
Author_Institution
Oklahoma State University, Stillwater, 74078, USA
fYear
2006
fDate
7-9 April 2006
Firstpage
208
Lastpage
210
Abstract
It was found experimentally that the photocurrent intensity in a Metal-Semiconductor-Metal (MSM) structure has a strong dependence on the position of the incident laser beam; however, there is no satisfactory explanation of this phenomenon. We simulated this process with device simulator ATLAS, and the result agrees with experiment pretty well. We also investigated various factors such as material property and external bias voltage that affect the current density, and found that the photocurrent changed significantly with these parameters.
Keywords
Anodes; Current density; Electrodes; Gallium arsenide; Neodymium; Photoconductivity; Photodetectors; Radiative recombination; Semiconductor device doping; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Region 5 Conference, 2006 IEEE
Conference_Location
San Antonio, TX, USA
Print_ISBN
978-1-4244-0358-5
Electronic_ISBN
978-1-4244-0359-2
Type
conf
DOI
10.1109/TPSD.2006.5507430
Filename
5507430
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