Nonlinear modeling of a SiGe HBT with applications to ultra low phase noise dielectric resonator oscillators

Author

Regis, M. ; Llopis, O. ; Escotte, L. ; Plana, R. ; Gruhle, A. ; Brazil, T.J. ; Chaubet, M. ; Graffeuil, J.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

83

Abstract

We propose a large signal model for a packaged SiGe heterojunction bipolar transistor. Pulsed I-V measurements are used to avoid thermal effects. The current model yields excellent correlation with pulsed output characteristics and S-parameters up to 18 GHz. The model´s validity is established by designing ultra low phase noise C and X band dielectric resonator oscillators (DROs).

Keywords

Ge-Si alloys; S-parameters; circuit noise; dielectric resonator oscillators; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave oscillators; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 18 GHz; C-band DRO design; S-parameters; SiGe; SiGe HBT; X band DRO design; dielectric resonator oscillators; large signal model; nonlinear modeling; packaged heterojunction bipolar transistor; pulsed I-V measurements; pulsed output characteristics; ultra low phase noise DROs; Dielectrics; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Packaging; Phase noise; Pulse measurements; Scattering parameters; Semiconductor device modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779430

Filename

779430