Low supply voltage high efficiency MMIC oscillator at C-band

Author

Ellinger, F. ; Lott, U. ; Bachtold, W.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Fed. Inst. of Technol., Zurich, Switzerland

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

87

Abstract

A monolithically integrated voltage controlled class-E oscillator for the C-band has been designed. The oscillator is optimized for high efficiency at ultra low supply voltages down to 0.9 V. The range of the tuning voltage is from 0 to the supply voltage. With a supply voltage of 1.8 V, an output power of 6.5 dBm, an efficiency of 43%, and a tuning range of 150 MHz is achieved at a center frequency of 4.42 GHz. With a supply voltage of only 0.9 V, the efficiency is still 36%, with an output power of 1.1 dBm, and a tuning range of 80 MHz at a frequency of 3.63 GHz.

Keywords

MESFET integrated circuits; MMIC oscillators; circuit tuning; field effect MMIC; low-power electronics; voltage-controlled oscillators; 0.6 micron; 0.9 to 1.8 V; 3.63 to 4.42 GHz; 36 to 43 percent; C-band; GaAs; GaAs MESFET technology; VCO; high efficiency MMIC oscillator; low supply voltage; tuning voltage; voltage controlled class-E oscillator; FETs; Frequency; Low voltage; MESFETs; MMICs; Microwave oscillators; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779431

Filename

779431