Title :
Low noise metamorphic HEMT devices and amplifiers on GaAs substrates
Author :
Marsh, P.F. ; Chu, S.L.G. ; Lardizabal, S.M. ; Leoni, R.E., III ; Kang, S. ; Wohlert, R. ; Bowlby, A.M. ; Hoke, W.E. ; McTaggart, R.A. ; Whelan, C.S. ; Lemonias, P.J. ; McIntosh, P.M. ; Kazior, T.E.
Author_Institution :
Adv. Device Centr, Raytheon Microelectron., Andover, MA, USA
Abstract :
Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for InAlAs-InGaAs metamorphic HEMTs on a GaAs substrate. These devices have been used to design and fabricate microwave and millimeter wave amplifiers. Amplifier results are presented.
Keywords :
HEMT integrated circuits; MMIC amplifiers; distributed amplifiers; field effect MIMIC; gallium arsenide; high electron mobility transistors; integrated circuit noise; microwave field effect transistors; millimetre wave amplifiers; millimetre wave field effect transistors; semiconductor device noise; substrates; wideband amplifiers; 0.41 dB; 11.5 dB; 18 GHz; 42.5 mW; GaAs; GaAs substrates; HEMT devices and amplifiers; InAlAs-InGaAs; LNA; low noise HEMT devices; metamorphic HEMT; microwave amplifiers; millimeter wave amplifiers; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Low-noise amplifiers; MODFETs; Noise figure; PHEMTs; Voltage; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779435
