DocumentCode
2988065
Title
Internal Unilaterization Technique for CMOS mm-Wave Amplifiers
Author
Heydari, Babak ; Adabi, Ehsan ; Bohsali, Mounir ; Afshar, Bagher ; Arbabian, Amin ; Niknejad, Ali M.
Author_Institution
UC Berkeley, Berkeley
fYear
2007
fDate
3-5 June 2007
Firstpage
463
Lastpage
466
Abstract
An internal unilaterization technique for cas-code devices is analyzed and demonstrated in 90 nm CMOS technology. The substrate network of the device has been incorporated in a circuit technique together with an LC tank on the top gate of the cascode structure. The structure is accurately modeled and conditions for unilaterization of the cascode are derived in terms of the the LC tank parameters. An increase in the maximum stable gain from 7.5 dB to 20 dB has been verified in the measurements using this technique.
Keywords
CMOS integrated circuits; millimetre wave amplifiers; CMOS technology; LC tank; cascode devices; gain 7.5 dB to 20 dB; internal unilaterization technique; mm wave amplifiers; size 90 nm; Automotive engineering; Bandwidth; CMOS technology; Capacitors; Circuits; Frequency; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Radar applications; CMOS amplifiers; cascode amplifiers; mm-wave; unilaterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
ISSN
1529-2517
Print_ISBN
1-4244-0530-0
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2007.380924
Filename
4266472
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