DocumentCode :
2988065
Title :
Internal Unilaterization Technique for CMOS mm-Wave Amplifiers
Author :
Heydari, Babak ; Adabi, Ehsan ; Bohsali, Mounir ; Afshar, Bagher ; Arbabian, Amin ; Niknejad, Ali M.
Author_Institution :
UC Berkeley, Berkeley
fYear :
2007
fDate :
3-5 June 2007
Firstpage :
463
Lastpage :
466
Abstract :
An internal unilaterization technique for cas-code devices is analyzed and demonstrated in 90 nm CMOS technology. The substrate network of the device has been incorporated in a circuit technique together with an LC tank on the top gate of the cascode structure. The structure is accurately modeled and conditions for unilaterization of the cascode are derived in terms of the the LC tank parameters. An increase in the maximum stable gain from 7.5 dB to 20 dB has been verified in the measurements using this technique.
Keywords :
CMOS integrated circuits; millimetre wave amplifiers; CMOS technology; LC tank; cascode devices; gain 7.5 dB to 20 dB; internal unilaterization technique; mm wave amplifiers; size 90 nm; Automotive engineering; Bandwidth; CMOS technology; Capacitors; Circuits; Frequency; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Radar applications; CMOS amplifiers; cascode amplifiers; mm-wave; unilaterization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
ISSN :
1529-2517
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2007.380924
Filename :
4266472
Link To Document :
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