An 800 MHz band high-efficiency power amplifier microwave integrated circuit

Author

Nakanishi, Eiichi ; Shibata, Junichi ; Ohsawa, Osamu

Author_Institution

OKI Electr. Ind. Co. Ltd., Honjo, Japan

fYear

1988

fDate

15-17 Jun 1988

Firstpage

555

Lastpage

559

Abstract

An 800 MHz band high-efficiency power amplifier using GaAs FETs is described. This unit is a two-stage amplifier consisting of GaAs FETs with a gate length of 0.5 μm, lumped constant capacitive elements, and distributed constant transmission lines. Efficiency improvement has been attained by optimizing the capacitive element position in the final-stage FET output circuit. As a result, an output power of 32 dBm and power-added efficiency of 70% have been attained in 800 MHz band with the operating voltage at 6 V and input power at +10 dBm

Keywords

III-V semiconductors; gallium arsenide; microwave amplifiers; microwave integrated circuits; mobile radio systems; power amplifiers; 0.5 micron; 6 V; 70 percent; 800 MHz; FETs; GaAs; III-V semiconductors; UHF; distributed constant transmission lines; high-efficiency power amplifier microwave integrated circuit; lumped constant capacitive elements; mobile radio equipment; two-stage amplifier; Distributed amplifiers; Distributed parameter circuits; FETs; Gallium arsenide; High power amplifiers; Microwave amplifiers; Power amplifiers; Power generation; Power transmission lines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vehicular Technology Conference, 1988, IEEE 38th

Conference_Location

Philadelphia, PA

ISSN

1090-3038

Type

conf

DOI

10.1109/VETEC.1988.195417

Filename

195417