Hot Carrier Degradation and Performance of 65nm RF n-MOSFET

Hot carrier stress (HCS) induces significant degradation on the performance of 65 nm RF n-MOSFET with minimum poly length (L_poly). Although the cutoff frequency (F_t) is very high (~212 GHz) for these devices, the high HCS degradation poses a challenge for RF application. Additional effort will be needed to improve the process and/or device to take full advantage of the record n-MOSFET performance.