Title :
Monolithic millimeter-wave balanced bi-phase amplitude modulator in GaAs/InGaP HBT technology
Author :
Nam, S. ; Shala, N. ; Ang, K.S. ; Ashtiani, A.E. ; Gokdemir, T. ; Robertson, I.D. ; Marsh, S.P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Abstract :
The design and performance of a monolithic 38 GHz balanced reflection-type direct carrier modulator in HBT technology is described. The circuit uses cold-HBTs as variable resistance reflection terminations. With a calibrated biasing technique, the circuit achieves /spl plusmn/0.1 dB amplitude error and /spl plusmn/1.5/spl deg/ phase error.
Keywords :
III-V semiconductors; amplitude modulation; bipolar MIMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit modelling; modulators; 38 GHz; AM; GaAs-InGaP; GaAs/InGaP HBT technology; balanced bi-phase amplitude modulator; calibrated biasing technique; cold-HBT variable resistance reflection terminations; direct carrier modulator; monolithic MM-wave balanced modulator; reflection-type; Amplitude modulation; Attenuators; Capacitance measurement; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Insertion loss; Millimeter wave technology; PHEMTs; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779466
