DocumentCode :
298848
Title :
Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion
Author :
Webster, R. ; Haigh, D.G. ; Parker, A.E.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume :
2
fYear :
1995
fDate :
30 Apr-3 May 1995
Firstpage :
1348
Abstract :
We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics
Keywords :
III-V semiconductors; MESFET circuits; gallium arsenide; intermodulation distortion; network synthesis; transfer functions; IMD reduction; MESFETs; circuit synthesis technique; continuously differentiable transfer characteristics; intermodulation distortion; linear transfer characteristics; nonlinear transfer characteristic; short channel GaAs FETs; Character generation; Circuit synthesis; FETs; Frequency; Gallium arsenide; Intermodulation distortion; MESFETs; Nonlinear distortion; Operational amplifiers; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2570-2
Type :
conf
DOI :
10.1109/ISCAS.1995.520396
Filename :
520396
Link To Document :
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