Title :
Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion
Author :
Webster, R. ; Haigh, D.G. ; Parker, A.E.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
30 Apr-3 May 1995
Abstract :
We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics
Keywords :
III-V semiconductors; MESFET circuits; gallium arsenide; intermodulation distortion; network synthesis; transfer functions; IMD reduction; MESFETs; circuit synthesis technique; continuously differentiable transfer characteristics; intermodulation distortion; linear transfer characteristics; nonlinear transfer characteristic; short channel GaAs FETs; Character generation; Circuit synthesis; FETs; Frequency; Gallium arsenide; Intermodulation distortion; MESFETs; Nonlinear distortion; Operational amplifiers; Transconductance;
Conference_Titel :
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2570-2
DOI :
10.1109/ISCAS.1995.520396
