DocumentCode :
2988483
Title :
Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology
Author :
John, Jay P. ; Kirchgessner, Jim ; Morgan, Dave ; Hildreth, Jill ; Dawdy, Morgan ; Reuter, Ralf ; Li, Hao
Author_Institution :
Freescale Semicond., Tempe
fYear :
2007
fDate :
3-5 June 2007
Firstpage :
559
Lastpage :
562
Abstract :
A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; BiCMOS; SiGe:C; collector structure; cutoff frequency; frequency 200 GHz; heterojunction bipolar transistors; millimeter-wave selective-epi; oscillation frequency; BiCMOS integrated circuits; Cutoff frequency; Heterojunction bipolar transistors; Implants; Integrated circuit technology; Isolation technology; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Bipolar transistors; Heterojunction bipolar transistors; Millimeter wave bipolar integrated circuits; Silicon Germanium; Silicon bipolar/BiCMOS process technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
ISSN :
1529-2517
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2007.380946
Filename :
4266494
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2988483
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