Title :
1-Watt Conventional and Cascoded GaN-SiC Darlington MMIC Amplifiers to 18 GHz
Author :
Kobayashi, Kevin W. ; Chen, Yaochung ; Smorchkova, Ioulia ; Tsai, Roger ; Wojtowicz, Mike ; Oki, Aaron
Author_Institution :
SIRENZA MICRODEVICES, Torrance
Abstract :
A 0.2 mum T-gate GaN-SiC HEMT technology with fT-70 GHz are used to achieve GaN Darlington MMIC Amplifiers with bandwidths up to 18 GHz. Both conventional Darlington and Cascoded-Darlington feedback designs were fabricated and measured. The Darlington Cascode obtains 14.7 dB gain and a bandwidth of 0.05-12.3 GHz. The conventional Darlington obtains 11 dB gain and a record 0.05-18.7 GHz multi-decade bandwidth for a GaN Darlington. These are the highest BWs reported for GaN Darlington MMIC amplifiers. In addition, P1dB ~1 Watt and > 40 dBm OIP3 was obtained beyond 4 GHz. To our knowledge, these results represent the widest bandwidths so far demonstrated for fully monolithic GaN Darlington MMICs.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; silicon compounds; wide band gap semiconductors; GaN-SiC; T-gate HEMT technology; bandwidth 0.05 GHz to 18.7 GHz; cascoded Darlington MMIC power amplifiers; conventional Darlington feedback design; gain 11 dB; gain 14.7 dB; monolithic Darlington MMIC; power 1 W; size 0.2 mum; Bandwidth; Broadband amplifiers; Feedback; Gain; Gallium nitride; HEMTs; MMICs; Optical amplifiers; Radiofrequency amplifiers; Space technology; Darlington; GaN HEMT; Power Amplifier (PA); broadband; fT-doubler; microwave; multi-decade;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380952