Title :
A gm-Boosted Current-Reuse LNA in 0.18μm CMOS
Author :
Walling, Jeffrey S. ; Shekhar, Sudip ; Allstot, David J.
Author_Institution :
Univ. of Washington, Seattle
Abstract :
Demand for fully-integrated RF circuits offering low power consumption continues to grow, along with a strong desire for high performance. In this paper a design that enhances the performance of the common-gate LNA is detailed. The noise performance is improved through the use of a gm-boosting technique, while the gain performance is improved using current-reuse techniques. The proposed solution alleviates the issues related to the common-source-common-source current-reuse topologies. The technique is validated with a design in 0.18 mum CMOS, with a 5.4 GHz LNA which achieves >20 dB of gain, <3 dB NF and consumes only 2.7 mW of power.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; radiofrequency integrated circuits; CMOS; common-gate LNA; common-source-common-source current-reuse topologies; current-reuse LNA; frequency 5.4 GHz; fully-integrated RF circuits; power 2.7 mW; size 0.18 mum; Capacitance; Character generation; Energy consumption; Inductors; Low-noise amplifiers; Noise figure; Performance gain; Q factor; Semiconductor device noise; Stability; Current-reuse; amplifier; gm-boosting; low noise; noise figure; transformer;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380958
