Title :
30 GHz CMOS Low Noise Amplifier
Author :
Adabi, Ehsan ; Heydari, Babak ; Bohsali, Mounir ; Niknejad, Ali M.
Author_Institution :
Univ. of California at Berkeley, Berkeley
Abstract :
30 GHz low noise amplifier was designed and fabricated in a 90 nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3 dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3=-7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 mum x 420 mum.
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MIMIC; field effect MMIC; low noise amplifiers; millimetre wave amplifiers; CMOS low noise amplifier; LNA; amplifier fabrication; bandwidth 2.6 GHz; digital CMOS process; frequency 28 GHz; frequency 28.5 GHz; frequency 30 GHz; gain 20 dB; mm-wave amplifier; power 16.25 mW; size 1600 mum; size 420 mum; size 90 nm; voltage 1 V; CMOS process; CMOS technology; Circuit noise; Frequency; Inductors; Insulation; Low-noise amplifiers; MIM capacitors; Semiconductor device modeling; Transistors; CMOS Low Noise Amplifier (LNA); CMOS mm-wave Amplifier; Round-Table Transistor;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380961
