A New Approach of High Frequency Noise Modeling for 70-nm NMOS Transistors by Accurate Noise Source Extraction

Noise sources of 70-nm NMOS transistors were extracted to reveal the channel noise is dominant up to 26 GHz. Gate induced noise increased in proportion to f², however, its level was 1 to 2 orders of magnitude lower than the channel noise. A new approach to accurately capturing the behavior of thermal noise by compensating for the discrepancy between extracted and simulated channel noise through the addition of an excess noise source was demonstrated. The excess noise source was incorporated into our REMOS model, which enabled us to accurately simulate noise parameters. By using this technique the noise figure of MOS transistors at any source impedance values can be simulated correctly.