Title :
A compact, high efficiency, 120 Watts GaAs power amplifier module for the 3rd generation cellular base stations
Author :
Morimoto, S. ; Maeda, M. ; Yokoyama, T. ; Ishida, H. ; Nakamura, M. ; Ota, Y.I. ; Ueda, D.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A compact 120 W GaAs power amplifier module operating in 2.1-2.2 GHz frequency band has been developed. The output power of prematched GaAs chips was combined in simplified Wilkinson´s circuit with significant features of small size and low loss. The developed amplifier module exhibited 123 W (103 W) output-power with a record high efficiency of 50% (54%) at drain voltage of 12 V (10 V) within a module size of as small as 36/spl times/70 mm/sup 2/.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; cellular radio; gallium arsenide; impedance matching; modules; power MESFET; power combiners; power dividers; 10 to 12 V; 103 to 123 W; 2.1 to 2.2 GHz; 3rd generation base stations; 50 to 54 percent; GaAs; GaAs power amplifier module; Wilkinson circuit; cellular base stations; compact design; high efficiency; prematched GaAs chip; Circuits; Frequency; Gallium arsenide; High power amplifiers; Impedance; Packaging; Power amplifiers; Power generation; Substrates; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779485
