DocumentCode
2988796
Title
A New Noise Parameter Model of Short-Channel MOSFETs
Author
Jeon, Jongwook ; Song, Ickhyun ; Kang, In Man ; Yun, Yeonam ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution
Seoul Nat. Univ., Seoul
fYear
2007
fDate
3-5 June 2007
Firstpage
639
Lastpage
642
Abstract
In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances, the noise contribution from each component is analyzed.
Keywords
MOSFET; equivalent circuits; semiconductor device models; thermal noise; channel thermal noise; noise contribution; noise parameter model; parasitic resistances; short-channel MOSFET; small-signal equivalent circuit; Analytical models; Circuit noise; Electrical resistance measurement; Equivalent circuits; MOSFETs; Noise measurement; Optimized production technology; Radio frequency; Thermal conductivity; Thermal resistance; RF MOSFET; analytical modeling; channel thermal noise; induced gate noise; noise parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
ISSN
1529-2517
Print_ISBN
1-4244-0530-0
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2007.380964
Filename
4266512
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