Title :
A New Noise Parameter Model of Short-Channel MOSFETs
Author :
Jeon, Jongwook ; Song, Ickhyun ; Kang, In Man ; Yun, Yeonam ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Seoul Nat. Univ., Seoul
Abstract :
In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances, the noise contribution from each component is analyzed.
Keywords :
MOSFET; equivalent circuits; semiconductor device models; thermal noise; channel thermal noise; noise contribution; noise parameter model; parasitic resistances; short-channel MOSFET; small-signal equivalent circuit; Analytical models; Circuit noise; Electrical resistance measurement; Equivalent circuits; MOSFETs; Noise measurement; Optimized production technology; Radio frequency; Thermal conductivity; Thermal resistance; RF MOSFET; analytical modeling; channel thermal noise; induced gate noise; noise parameters;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380964
