Title :
Designing high-power limiter circuits with GaAs PIN diodes
Author :
Smith, D.G. ; Heston, D.D. ; Allen, D.L.
Author_Institution :
Raytheon Syst. Co., Dallas, TX, USA
Abstract :
The three key parameters of passive limiter circuits: limiting, burnout and insertion loss are explained in great detail in this paper. The limiting and burnout characteristics of various size GaAs PIN diodes have been measured. Results indicate that the burnout level is proportional to diode circumference. A design concept for a broadband high-power limiter is discussed using this measured data.
Keywords :
III-V semiconductors; capacitance; gallium arsenide; microwave circuits; microwave diodes; microwave limiters; p-i-n diodes; protection; semiconductor device testing; 1 GHz; 9.5 GHz; GaAs; GaAs PIN diodes; broadband high-power limiter; burnout characteristics; diode circumference; diode testing; high-power limiter circuits; insertion loss; limiting characteristics; Capacitance; Gallium arsenide; Insertion loss; Microwave circuits; Power generation; Power measurement; Radio frequency; Semiconductor diodes; Size measurement; Testing;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779486
