Title :
MOSFET Model Extraction Using 50GHz Four-Port Measurements
Author :
Brinkhoff, James ; Rustagi, Subhash C. ; Shi, Jinglin ; Lin, Fujiang
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
An accurate and efficient method to extract an equivalent circuit model of a MOSFET is presented. Four-port measurements simplify the determination of important elements, such as the substrate networks. These measurements are also used to extract the MOSFET extrinsic parasitic elements. The accuracy of the model extraction is verified by simulation and measurement to 50 GHz.
Keywords :
MOSFET; equivalent circuits; millimetre wave measurement; semiconductor device measurement; semiconductor device models; MOSFET extrinsic parasitic elements; MOSFET model extraction; equivalent circuit model; four-port measurements; frequency 50 GHz; substrate networks; Circuit simulation; Data mining; Equivalent circuits; FETs; MOSFET circuits; Microelectronics; Probes; Scattering parameters; Semiconductor device modeling; Voltage; MOSFETs; microwave measurements; modeling;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380966
