DocumentCode
2988846
Title
MOSFET Model Extraction Using 50GHz Four-Port Measurements
Author
Brinkhoff, James ; Rustagi, Subhash C. ; Shi, Jinglin ; Lin, Fujiang
Author_Institution
Inst. of Microelectron., Singapore
fYear
2007
fDate
3-5 June 2007
Firstpage
647
Lastpage
650
Abstract
An accurate and efficient method to extract an equivalent circuit model of a MOSFET is presented. Four-port measurements simplify the determination of important elements, such as the substrate networks. These measurements are also used to extract the MOSFET extrinsic parasitic elements. The accuracy of the model extraction is verified by simulation and measurement to 50 GHz.
Keywords
MOSFET; equivalent circuits; millimetre wave measurement; semiconductor device measurement; semiconductor device models; MOSFET extrinsic parasitic elements; MOSFET model extraction; equivalent circuit model; four-port measurements; frequency 50 GHz; substrate networks; Circuit simulation; Data mining; Equivalent circuits; FETs; MOSFET circuits; Microelectronics; Probes; Scattering parameters; Semiconductor device modeling; Voltage; MOSFETs; microwave measurements; modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location
Honolulu, HI
ISSN
1529-2517
Print_ISBN
1-4244-0530-0
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2007.380966
Filename
4266514
Link To Document