Author :
Tachibana, Ryoichi ; Kousai, Shouhei ; Kato, Takayuki ; Kobayashi, Hiroyuki ; Ito, Rui ; Maki, Asuka ; Miyashita, Daisuke ; Araki, Yuta ; Hashimoto, Toru ; Hoshino, Hiroaki ; Sekiguchi, Takahiro ; Ashida, Mitsuyuki ; Seto, Ichiro ; Hamada, Mototsugu ; Fuj
Abstract :
A 5 GHz MIMO direct-conversion transceiver composed of 2 transmitters (TXs) and 3 receivers (RXs) is fabricated with 0.13 mum CMOS technology. Die size is 4.56 mm times 7.7 mm. For driving 10 GHz LO signal lines of 5 mm length for both TXs and RXs, inductor-less low-power LO repeaters are equipped in individual LO paths. A linearized RF variable gain amplifier is proposed for low power operation. Isolation of over 40 dB is obtained by equipping separate GNDs on both the MIMO IC and the circuit board. This results in negligible degradation of EVM. TX EVM of over -31 dB is obtained at -8.6 dBm for 2 TX mode when external LO of 10 GHz is applied. The 3 RXs and 2 TXs with LO paths dissipate 703 mW and 412 mW from 1.5 V, respectively.
Keywords :
CMOS integrated circuits; MIMO communication; microwave amplifiers; microwave integrated circuits; microwave receivers; radio receivers; radio repeaters; radio transmitters; transceivers; CMOS direct-conversion MIMO transceiver; CMOS technology; LO signal lines; circuit board; frequency 10 GHz; frequency 5 GHz; inductor-less low-power LO repeaters; linearized RF variable gain amplifier; power 412 mW; power 703 mW; receiver; single-chip MIMO transceivers; size 0.13 mum; size 4.56 mm; size 5 mm; size 7.7 mm; transmitter; voltage 1.5 V; CMOS integrated circuits; CMOS technology; Gain; Isolation technology; MIMO; Operational amplifiers; Radio frequency; Repeaters; Transceivers; Transmitters; CMOS; Isolation; MIMO; RFIC; WLAN;
