DocumentCode :
2988975
Title :
500 W, class E 27.12 MHz amplifier using a single plastic MOSFET
Author :
Frey, R.
Author_Institution :
Adv. Power Technol. Inc., Bend, OR, USA
Volume :
1
fYear :
1999
fDate :
13-19 June 1999
Firstpage :
359
Abstract :
In this paper, we report on the design and evolution of a 500 W, 27 MHz Class E amplifier. It doubles the operating frequency of previous high efficiency amplifiers using MOSFET transistors in the TO-247 package. Device criteria, circuit design, and amplifier performance characteristics are presented and compared to a HEPA computer model.
Keywords :
HF amplifiers; MOSFET circuits; circuit CAD; 27.12 MHz; 500 W; HEPA computer model; TO-247 package; amplifier performance characteristics; circuit design; class E amplifier; high efficiency amplifiers; operating frequency; plastic MOSFET; Heat sinks; MOSFET circuits; Packaging; Plasma applications; Plasma devices; Plastics; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
Type :
conf
DOI :
10.1109/MWSYM.1999.779493
Filename :
779493
Link To Document :
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