DocumentCode
2989086
Title
A performance prediction model for a piezoresistive transducer pressure sensor
Author
Song, Xu ; Liu, Sheng
Author_Institution
Inst. of Microsystems, Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2003
fDate
28-30 Oct. 2003
Firstpage
30
Lastpage
35
Abstract
The performance of a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by the finite element method. A simplified 1/8 model, considering silicon dioxide and nitride processes as well as stack-anodic bonding and adhesive bonding processes, was developed. The FEM results were found to be comparable to experimental data. Case studies suggested that a Pyrex stack induces a certain amount of non-linearity, while it isolates the hard epoxy nonlinear effect. Flexible epoxy bonding or soft adhesive bonding is preferred for the packaging process. The viscoelasticity and viscoplasticity of the bonding material will result in hysteresis and drift errors of the sensor output. However, the soft adhesive´s influence on the sensor can be ignored under relatively stable environments. Moreover, detailed design and process information will help to improve the modeling application.
Keywords
adhesive bonding; electronics packaging; finite element analysis; piezoresistive devices; pressure sensors; thermal stresses; viscoelasticity; viscoplasticity; FEM; PRT performance prediction model; Pyrex stack; SiN; SiO/sub 2/; finite element method; flexible epoxy bonding; hard epoxy nonlinear effect; piezoresistive transducer pressure sensor; pressure stresses; sensor output drift errors; sensor output hysteresis; soft adhesive bonding; stack-anodic bonding; thermal stresses; viscoelasticity; viscoplasticity; Bonding processes; Elasticity; Finite element methods; Packaging; Piezoresistance; Predictive models; Silicon compounds; Thermal sensors; Transducers; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location
Shanghai, China
Print_ISBN
0-7803-8168-8
Type
conf
DOI
10.1109/EPTC.2003.1298688
Filename
1298688
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