DocumentCode :
2989137
Title :
A 45-to-60-GHz Two-Band SiGe: C VCO for Millimeter-Wave Applications
Author :
Lee, Ja-Yol ; Lee, Sang-Heung ; Kim, Haecheon ; Yu, Hyun-Kyu
Author_Institution :
ETRI, Daejeon
fYear :
2007
fDate :
3-5 June 2007
Firstpage :
709
Lastpage :
712
Abstract :
A 45 - 60-GHz two-band double cross-coupled differential VCO is designed and fabricated using 0.25 mum SiG:C BiCMOS process technology whose fmax is greater than 200 GHz. The VCO provides tuning ranges of 44.9 - 48.9 GHz when its bias current is 13 mA and of 58 - 60.4 GHz when a bias current of 7 mA draws into the VCO. The phase noises of the VCO are measured as - 99 dBc/Hz from 48.86 GHz and - 93 dBc/Hz from 60.32 GHz, at 10 MHz offset, respectively. The VCO shows moderate FOMs of 156 dBc at 60.32 GHz and 158 dBc at 48.86 GHz.
Keywords :
BiCMOS integrated circuits; millimetre wave oscillators; phase noise; voltage-controlled oscillators; BiCMOS process technology; current 13 mA; frequency 45 GHz to 60 GHz; millimeter-wave application; phase noise; size 0.25 mum; two-band SiGe:C VCO; voltage controlled oscillator; BiCMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Millimeter wave technology; Noise measurement; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators; 60 GHz; Phase Noise; SiGe:C; VCO; receiver;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
ISSN :
1529-2517
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2007.380981
Filename :
4266529
Link To Document :
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