DocumentCode :
2989291
Title :
Low-Capacitance SCR With Waffle Layout Structure for On-Chip ESD Protection in RF ICs
Author :
Lin, Chun-Yu ; Ker, Ming-Dou
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
fYear :
2007
fDate :
3-5 June 2007
Firstpage :
749
Lastpage :
752
Abstract :
Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.
Keywords :
CMOS integrated circuits; capacitance; electrostatic discharge; integrated circuit layout; radiofrequency integrated circuits; rectifiers; CMOS technology; ESD robustness; RF circuit performance; RFIC; low-capacitance SCR; on-chip ESD protection device; parasitic capacitance; silicon-controlled rectifier; waffle layout structure; CMOS technology; Circuit optimization; Degradation; Electrostatic discharge; Parasitic capacitance; Protection; Radio frequency; Rectifiers; Robustness; Thyristors; Electrostatic discharges (ESD); radio-frequency integrated circuit (RF IC); silicon-controlled rectifier (SCR);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
ISSN :
1529-2517
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2007.380991
Filename :
4266539
Link To Document :
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