DocumentCode
2989473
Title
Advances in lithography technologies for wafer-level packaging
Author
Pelzer, R. ; Kettner, P. ; Lindner, P. ; Schaefer, C.
Author_Institution
EV Group, Schaerding, Austria
fYear
2003
fDate
28-30 Oct. 2003
Firstpage
126
Lastpage
129
Abstract
With the continuous reduction in IC feature size, the increased demand for higher speed and lower power consumption and with the simultaneous increase of I/O, wafer-level packaging is today an interesting solution for IC and micro electro mechanical systems(MEMS) packaging having as result the cost decrease and increased performance. With wafer-level packaging (WLP) the die and the package are fabricated and tested on the wafer prior to the dicing. Among the advantages of WLP are smaller IC package and a significant of-scale cost reduction due to high throughput of the parallel running packaging and electrical testing steps on wafer size. Thick resist-coating, lithography and wafer-to-wafer alignment for subsequent bonding are key enabling technologies for WLP. The roadmap for transistor scaling predicts further increase of circuit complexity, which comes along with higher pin count densities (pins per unit area) and therefore smaller feature sizes. This fact makes specialized and unique processing equipment development a must. This paper is summarizing the specific process requirements and will review the current technologies supporting WLP.
Keywords
chip scale packaging; photolithography; spin coating; IC feature size; chip size packaging; circuit complexity; cost decrease; high throughput; lithography technologies; mask aligner; processing equipment development; thick resist-coating; wafer-level packaging; wafer-to-wafer alignment; Circuit testing; Costs; Energy consumption; High speed integrated circuits; Integrated circuit packaging; Integrated circuit testing; Lithography; Throughput; Wafer bonding; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location
Shanghai, China
Print_ISBN
0-7803-8168-8
Type
conf
DOI
10.1109/EPTC.2003.1298707
Filename
1298707
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