Performance Improvement of OTFTs using Double Layer Insulator

Author

Park, Dong-Wook ; Lee, Cheon An ; Jung, Keum-Dong ; Kim, Byeong-Ju ; Park, Byung-Gook ; Shin, Hyungcheol ; Lee, Jong Duk

Author_Institution

Seoul Nat. Univ., Seoul

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

48

Lastpage

51

Abstract

Organic thin-film transistors (OTFTs) with improved performance are fabricated using SiO₂-cross-linked PVA double layer insulator. The improved field- effect mobility, on-current, off-current, on/off ratio, and subthreshold slope are 0.12 cm²/V-sec, 9.2times10^-6 Aring, 2times10^-12 Aring, 4.6times10₆, and 0.4 V/dec, respectively. In addition, a negligible threshold voltage shift is observed in the device. The performance improvements are attributed to good leakage characteristic of SiO₂ and high-k characteristic of cross- linked PVA. Based on the proposed OTFTs, an organic inverter working as high as 1 kHz is implemented.

Keywords

carrier mobility; field effect transistors; high-k dielectric thin films; leakage currents; organic semiconductors; polymer films; silicon compounds; thin film transistors; SiO₂ leakage characteristics; SiO₂-cross-linked PVA double layer insulator; field- effect mobility; high-k characteristic cross- linked PVA; organic inverter; organic thin-film transistor fabrication; threshold voltage shift; Dielectrics and electrical insulation; Fabrication; High-K gate dielectrics; Hysteresis; Lithography; Organic materials; Organic thin film transistors; Pentacene; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.381017

Filename

4266567