Simulation of a Novel Lateral H Structure PIN InGaAs Photodiode with Consistent Electron Drift Length

We investigated the microscopic view of electron captured in a lateral PIN InGaAs photodiodes which was implemented on an H electrode structure. The results illustrated a near ideal generated current with minimal delay time. We assumed the structure was implemented in a 10 Gbps, 30 Gbs and 50 Gbps network with a PIN sensitivity of 30 dBm with incident light power at 0.1 mW. The sizes of the electrodes range from 7 mum to 8 mum at 0.8 and 0.5 intrinsic-junction ratio respectively. The fastest response 1,210,900,945 A/W of the device was obtained through a simulator study.