DocumentCode
2989852
Title
Silicon-based micro-sensor for electrical resistance tomography
Author
Liling, Sun ; York, Trevor ; Gregory, Chris ; Hatfield, J.
Author_Institution
Xi´´an 771 Microelectron. Technol. Inst., China
fYear
2003
fDate
28-30 Oct. 2003
Firstpage
201
Lastpage
203
Abstract
Electrical Resistance Tomography.(ERT) has been investigated intensively in the past few years. This paper will present a very small silicon based microsensor made by the standard IC fabrication process. Compared with the existing small-scale ERT sensors, the electrodes of this sensor are more accurate in size and position, because of the IC process.
Keywords
electric impedance imaging; elemental semiconductors; etching; microelectrodes; micromachining; microsensors; silicon; Si; anisotropic etching; electrical resistance tomography; epoxy adhesive; hole etching; impedance analysis; micromachining process; process tomography; sensor electrodes; silicon-based microsensor; standard IC fabrication process; Anisotropic magnetoresistance; Artificial intelligence; Conducting materials; Electric resistance; Electrodes; Etching; Fabrication; Image sensors; Silicon; Tomography;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location
Shanghai, China
Print_ISBN
0-7803-8168-8
Type
conf
DOI
10.1109/EPTC.2003.1298725
Filename
1298725
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