Title :
Significant reduction of recovery time in semiconductor optical amplifier using p type modulation doped MQW
Author :
Zhang, L. ; Kang, I. ; Bhardwaj, A. ; Sauer, N. ; Cabot, S. ; Jaques, J. ; Neilson, D.T.
Author_Institution :
Bell Laboratories, Lucent Technology, 791 Holmdel-Keyport Road, Holmdel, NJ 07733, USA, Email: lmz@lucent.com
Abstract :
The effect of p-type doping of the barriers of multiple quantum well semiconductor optical amplifiers is shown to significantly reduce the gain and carrier recovery times with phase recovery times as short as 11ps.
Keywords :
Epitaxial layers; Gain measurement; Indium phosphide; Laser theory; Optical wavelength conversion; Phase measurement; Quantum well devices; Semiconductor optical amplifiers; Wavelength measurement; Zinc;
Conference_Titel :
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location :
Cannes, France
Print_ISBN :
978-2-912328-39-7
Electronic_ISBN :
978-2-912328-39-7
DOI :
10.1109/ECOC.2006.4801115
