Title :
A 68% P.A.E. power pHEMT for K-band satellite communication system
Author :
Satoh, T. ; Betti-Berutto, A. ; Poledrelli, C. ; Khandavalli, C. ; Nikaido, J. ; Kuroda, S. ; Yokoyama, T. ; Fukaya, J.
Author_Institution :
Fujitsu Quantum Devices Ltd., Yamanashi, Japan
Abstract :
A 68% power-added efficiency power pseudomorphic HEMT (pHEMT) has been developed. Based on an optimized device structure and tuned to the maximum efficiency condition, we achieved this efficiency with 225 mW output power at 18 GHz. Using this power pHEMT technology, we have also developed a K-band 2-stage MMIC amplifier with 45% power-added efficiency, 450 mW output power and 18 dB gain. These are the highest efficiency figures reported for K-band applications.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; microwave field effect transistors; microwave power transistors; power HEMT; power integrated circuits; satellite communication; 18 GHz; 18 dB; 225 mW; 45 percent; 450 mW; 68 percent; K-band 2-stage MMIC amplifier; K-band satellite communication system; SHF; optimized device structure; power pHEMT; power-added efficiency; pseudomorphic HEMT; Gallium arsenide; Heterojunction bipolar transistors; K-band; MMICs; PHEMTs; Power amplifiers; Power generation; Radio frequency; Satellite communication; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779546
