Gas Sensing Properties of ZnO:Al Thin Films Prepared by RF Magnetron Sputtering

Author

Teoh, Lay Gaik ; Chen, Hong Ming ; Su, Yen Hsun ; Lai, Wei Hao ; Chou, Shih Min ; Hon, Min Hsiung

Author_Institution

Nat. Pingtung Univ. of Sci. & Technol., Pingtung

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

142

Lastpage

145

Abstract

The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ~20 at an operating temperature of 250square. The high sensitivity, fast recovery, and reliability suggest that ZnO:Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.

Keywords

II-VI semiconductors; X-ray diffraction; aluminium; gas sensors; scanning electron microscopy; semiconductor thin films; sputter deposition; zinc compounds; RF magnetron sputtering; SEM; Si; XRD; ZnO:Al; electrical properties; ethanol vapor gas sensing; high sensitivity; interdigitated electrodes; reliability; temperature 250 C; thin films; Electrodes; Ethanol; Magnetic analysis; Magnetic properties; Radio frequency; Semiconductor thin films; Sputtering; Substrates; Temperature sensors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.381036

Filename

4266586