Title :
The model of process of low-temperature plasmachemical treatment of units of CRPhED
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The application of the model of plasma gap for process of low-temperature plasmachemical treatment of units of cathode-ray and photoelectronic devices (CRPhED) is considered. The model allows to consider potential distribution in the gap as similar to potential distribution without plasma. The model gives the possibility to calculate potential on the electrodes, necessary for the quality cleaning of workpieces
Keywords :
cathode-ray tubes; electrodes; electron tube manufacture; phototubes; plasma materials processing; surface cleaning; CRPhED units; cathode-ray and photoelectronic devices; electrode potential; low-temperature plasmachemical treatment; plasma gap; potential distribution; process model; workpiece cleaning; Capacitors; Dielectric materials; Electrodes; Electron optics; Electron tubes; Hafnium; Inductors; Plasma materials processing; Production systems; Vacuum systems;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-5903-8
DOI :
10.1109/APEIE.2000.913086
