DocumentCode
2990507
Title
Cracking prediction of IC´s passivation layer using J-integral
Author
He, Y.T. ; Zhang, G.Q. ; van Drie, W.D. ; Fan, X.J. ; Ernst, L.J.
Author_Institution
Philips, Eindhoven, Netherlands
fYear
2003
fDate
28-30 Oct. 2003
Firstpage
362
Lastpage
367
Abstract
Passivation layer cracks in ICs are often observed. The interfaces between compound or metal lines and passivation layers form typical corners, with two materials involved. The J-integral around the corner tip is presented as the passivation layer cracking criterion here, which is called modified J-integral criterion. With this modified J-integral criterion and the fracture toughness of passivation material, the passivation layer cracking can be predicted. Finite Element Method(FEM) is employed in this paper to calculate the J-integral by means of energy release rate. And the passivation corner J-integral value and most possible cracking direction are predicted for a given example.
Keywords
finite element analysis; fracture toughness; integrated circuit reliability; passivation; thermal stress cracking; FEM; IC passivation layer; IC reliability; cracking prediction; energy release rate; fracture toughness; interconnect structure model; maximum principle stress distribution; modified J-integral criterion; thermomechanical failures; two-dimensional models; Capacitive sensors; Electronics industry; Finite element methods; Inorganic materials; Integrated circuit reliability; Passivation; Semiconductor device reliability; Technological innovation; Tensile stress; Thermomechanical processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location
Shanghai, China
Print_ISBN
0-7803-8168-8
Type
conf
DOI
10.1109/EPTC.2003.1298761
Filename
1298761
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