Title :
Cracking prediction of IC´s passivation layer using J-integral
Author :
He, Y.T. ; Zhang, G.Q. ; van Drie, W.D. ; Fan, X.J. ; Ernst, L.J.
Author_Institution :
Philips, Eindhoven, Netherlands
Abstract :
Passivation layer cracks in ICs are often observed. The interfaces between compound or metal lines and passivation layers form typical corners, with two materials involved. The J-integral around the corner tip is presented as the passivation layer cracking criterion here, which is called modified J-integral criterion. With this modified J-integral criterion and the fracture toughness of passivation material, the passivation layer cracking can be predicted. Finite Element Method(FEM) is employed in this paper to calculate the J-integral by means of energy release rate. And the passivation corner J-integral value and most possible cracking direction are predicted for a given example.
Keywords :
finite element analysis; fracture toughness; integrated circuit reliability; passivation; thermal stress cracking; FEM; IC passivation layer; IC reliability; cracking prediction; energy release rate; fracture toughness; interconnect structure model; maximum principle stress distribution; modified J-integral criterion; thermomechanical failures; two-dimensional models; Capacitive sensors; Electronics industry; Finite element methods; Inorganic materials; Integrated circuit reliability; Passivation; Semiconductor device reliability; Technological innovation; Tensile stress; Thermomechanical processes;
Conference_Titel :
Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
Conference_Location :
Shanghai, China
Print_ISBN :
0-7803-8168-8
DOI :
10.1109/EPTC.2003.1298761