• DocumentCode
    2990777
  • Title

    Large aperture 850 nm VCSEL operating at 28 Gbit/s

  • Author

    Westbergh, P. ; Gustavsson, J.S. ; Haglund, Å ; Larsson, A.

  • Author_Institution
    Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    7
  • Lastpage
    8
  • Abstract
    We report on large aperture, oxide-confined VCSELs at 850 nm with modulation bandwidths in excess of 20 GHz and demonstrate large-signal modulation up to 28 Gbit/s at a bias current density of only 10 kA/cm2.
  • Keywords
    current density; laser cavity resonators; optical modulation; quantum well lasers; surface emitting lasers; bias current density; bit rate 28 Gbit/s; large aperture; large-signal modulation; oxide-confined VCSEL; wavelength 850 nm; Apertures; Bandwidth; Bit rate; Current density; Digital modulation; Optical modulation; Photonics; Thermal resistance; Vertical cavity surface emitting lasers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4635982
  • Filename
    4635982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2990777