Title :
High power, broad spectral width, 1300nm quantum-dot superluminescent diodes
Author :
Krakowski, Michel ; Resneau, Patrick ; Calligaro, Michel ; Hugues, Maxime ; Hopkinson, Mark ; Gioannini, Mariangela ; Bardella, Paolo ; Montrosset, Ivo
Author_Institution :
Alcatel Thales III-V Lab., Palaiseau
Abstract :
1300 nm InAs quantum dot narrow ridge superluminescent diodes have reached a high power of 70 mW/facet under CW operation, together with a broad spectral width of 80 nm.
Keywords :
III-V semiconductors; indium compounds; laser beams; quantum dot lasers; superluminescent diodes; CW operation; InAs; SLD; high power diodes; narrow ridge superluminescent diodes; power 70 mW; quantum dot lasers; quantum-dot superluminescent diodes; wavelength 1300 nm; Chirp; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical sensors; Quantum dot lasers; Quantum dots; Stimulated emission; Superlattices; Superluminescent diodes; 1300nm wavelength; Quantum dot superluminescent diodes; broad spectral width; high optical power;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4635990
