Title :
An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element
Author :
Ayzenshtat, G.I. ; Khan, A.V. ; Tolbanov, O.P. ; Mokeev, D.U.
Author_Institution :
Semicond. Devices Res. Inst., Sci. & Production State Enterprise, Tomsk, Russia
Abstract :
An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gamma-ray detection; heterojunction bipolar transistors; semiconductor counters; AlGaAs; AlGaAs heterojunction bipolar transistor; gamma-ray detection; ionizing radiation detector; nonequilibrium holes; signal amplification; three-dimensional electric field; Bipolar transistors; Charge carrier processes; Charge carriers; Current density; Electrons; Gamma ray detection; Gamma ray detectors; Ionizing radiation; Radiation detectors; Voltage;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-5903-8
DOI :
10.1109/APEIE.2000.913112
