DocumentCode :
2991060
Title :
Measurement of linewidth enhancement factor in 1.3μm quantum dot and quantum well vertical-cavity surface-emitting lasers
Author :
Peng, P.C. ; Yeh, C.E. ; Kuo, H.C. ; Yang, S.H. ; Xuan, R. ; Lin, G. ; Chi, J.Y. ; Wang, S.C.
Author_Institution :
Dept. of Appl. Mater. & Optoelectron. Eng., Nat. Chi Nan Univ., Puli
fYear :
2008
fDate :
14-18 Sept. 2008
Firstpage :
35
Lastpage :
36
Abstract :
This work for the first time, experimentally investigated the linewidth enhancement factor (alpha factor) of quantum dot vertical cavity surface emitting laser. alpha factor values between 0.48 and 0.60 were measured.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser variables measurement; quantum dot lasers; quantum well lasers; surface emitting lasers; InAs-InGaAs; linewidth enhancement factor measurement; quantum dot laser; quantum well laser; vertical-cavity surface-emitting lasers; wavelength 1.3 mum; Fiber lasers; Gallium arsenide; Laser modes; Optical materials; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
Type :
conf
DOI :
10.1109/ISLC.2008.4635996
Filename :
4635996
Link To Document :
بازگشت